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vishay siliconix si4972dy document number: 73849 s09-0138-rev. d, 02-feb-09 www.vishay.com 1 dual n-channel 30-v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 available ?trenchfet ? power mosfet ? 100 % r g te s t e d applications ? logic dc/dc for notebook pc product summary v ds (v) r ds(on) ( ) i d (a) a q g (typ.) channel 1 30 0.0145 at v gs = 10 v 10.8 8.3 0.0195 at v gs = 4.5 v 9.3 channel 2 30 0.0265 at v gs = 10 v 7.2 4 0.036 at v gs = 4.5 v 6.2 notes: a. based on t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. maximum under steady state conditions is 110 c/w (ch 1) and 120 c/w (ch 2). absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol channel 1 channel 2 unit drain-source voltage v ds 30 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 10.8 7.2 a t c = 70 c 8.7 5.7 t a = 25 c 8.7 b,c 6.4 b,c t a = 70 c 6.9 b,c 5.1 b,c pulsed drain current (10 s pulse width) i dm 20 20 source-drain current diode current t c = 25 c i s 2.5 2.1 t a = 25 c 1.6 b,c 1.6 b,c pulsed source-drain current i sm 20 20 single pulse avalanche current l = 0.1 mh i as 15 6 avalanche energy e as 11 1.8 mj maximum power dissipation t c = 25 c p d 3.1 2.5 w t c = 70 c 2.1 1.6 t a = 25 c 2.0 b,c 2.0 b,c t a = 70 c 1.25 b,c 1.25 b,c operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol channel 1 channel 2 unit typical maximum typical maximum maximum junction-to-ambient b, d t 10 s r thja 52 62.5 55 62.5 c/w maximum junction-to-foot (drain) steady r thjf 32 40 40 50 s 1 d 1 g 1 d 1 s 2 d 2 g 2 d 2 so-8 5 6 7 8 top v ie w 2 3 4 1 orderin g information: SI4972DY-T1-E3 (lead (p b )-free) si4972dy-t1-ge3 (lead (p b )-free and halogen-free) n -channel mosfet d 1 g 1 s 1 d 2 g 2 s 2 n -channel mosfet
www.vishay.com 2 document number: 73849 s09-0138-rev. d, 02-feb-09 vishay siliconix si4972dy specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. a max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a ch 1 30 v v gs = 0 v, i d = 250 a ch 2 30 v ds temperature coefficient v ds /t j i d = 250 a ch 1 35 mv/c i d = 250 a ch 2 35 v gs(th) temperature coefficient v gs(th) /t j i d = 250 a ch 1 - 6.5 i d = 250 a ch 2 - 6.5 gate threshold voltage v gs(th) v ds = v gs , i d = 250 a ch 1 1.5 3.0 v v ds = v gs , i d = 250 a ch 2 1.5 3.0 gate-body leakage i gss v ds = 0 v, v gs = 20 v ch 1 100 na ch 2 100 zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v ch 1 1 a v ds = 30 v, v gs = 0 v ch 2 1 v ds = 30 v, v gs = 0 v, t j = 55 c ch 1 10 v ds = 30 v, v gs = 0 v, t j = 55 c ch 2 10 on-state drain current b i d(on) v ds = 5 v, v gs = 10 v ch 1 10 a v ds = 5 v, v gs = 10 v ch 2 10 drain-source on-state resistance b r ds(on) v gs = 10 v, i d = 6 a ch 1 0.012 0.0145 v gs = 10 v, i d = 4.5 a ch 2 0.022 0.0265 v gs = 4.5 v, i d = 5.6 a ch 1 0.016 0.0195 v gs = 4.5 v, i d = 4 a ch 2 0.030 0.036 forward transconductance b g fs v ds = 15 v, i d = 6 a ch 1 27 s v ds = 15 v, i d = 4.5 a ch 2 20 dynamic a input capacitance c iss channel 1 v ds = 15 v, v gs = 0 v, f = 1 mhz channel 2 v ds = 15 v, v gs = 0 v, f = 1 mhz ch 1 1080 pf ch 2 515 output capacitance c oss ch 1 170 ch 2 91 reverse transfer capacitance c rss ch 1 72 ch 2 38 total gate charge q g v ds = 15 v, v gs = 10 v, i d = 5 a ch 1 18.5 28 nc v ds = 15 v, v gs = 10 v, i d = 5 a ch 2 9.6 15 channel 1 v ds = 15 v, v gs = 4.5 v, i d = 5 a channel 2 v ds = 15 v, v gs = 4.5 v, i d = 5 a ch 1 8.3 13 ch 2 4 6 gate-source charge q gs ch 1 3.9 ch 2 1.9 gate-drain charge q gd ch 1 2.7 ch 2 1.3 gate resistance r g f = 1 mhz ch 1 2.5 3.8 ch 2 2.9 4.4
document number: 73849 s09-0138-rev. d, 02-feb-09 www.vishay.com 3 vishay siliconix si4972dy notes: a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2 %. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended per iods may affect device reliability. parameter symbol test conditions min. typ. a max. unit dynamic a tu r n - o n d e l ay t i m e t d(on) channel 1 v dd = 15 v, r l = 3 i d ? 5 a, v gen = 10 v, r g = 1 channel 2 v dd = 15 v, r l = 3 i d ? 5 a, v gen = 10 v, r g = 1 ch 1 12 18 ns ch 2 10 15 rise time t r ch 1 55 83 ch 2 60 90 turn-off delaytime t d(off) ch 1 30 45 ch 2 22 33 fall time t f ch 1 711 ch 2 6 9 tu r n - o n d e l ay t i m e t d(on) channel 1 v dd = 15 v, r l = 3 i d ? 5 a, v gen = 4.5 v, r g = 1 channel 2 v dd = 15 v, r l = 3 i d ? 5 a, v gen = 4.5 v, r g = 16 ch 1 120 180 ch 2 108 162 rise time t r ch 1 150 225 ch 2 130 195 turn-off delay time t d(off) ch 1 29 44 ch 2 19 29 fall time t f ch 1 13 20 ch 2 26 39 drain-source body diode characteristics continous source-drain diode current i s t c = 25 c ch 1 2.5 a ch 2 2.1 pulse diode forward current a i sm ch 1 20 ch 2 20 body diode voltage v sd i s = 1.6 a ch 1 0.77 1.2 v i s = 1.6 a ch 2 0.79 1.2 body diode reverse recovery time t rr channel 1 i f = 2 a, di/dt = 100 a/s, t j = 25 c channel 2 i f = 2 a, di/dt = 100 a/s, t j = 25 c ch 1 21 42 ns ch 2 18 36 body diode reverse recovery charge q rr ch 1 15 30 nc ch 2 11 22 reverse recovery fall time t a ch 1 13 ns ch 2 11 reverse recovery rise time t b ch 1 8 ch 2 7 specifications t j = 25 c, unless otherwise noted
www.vishay.com 4 document number: 73849 s09-0138-rev. d, 02-feb-09 vishay siliconix si4972dy typical characteristics 25 c, unless otherwise noted output characteristics (ch 1) on-resistance vs. drain current and gate voltage (ch 1) gate charge (ch 1) 0 6 12 1 8 24 30 0.0 0.5 1.0 1.5 2.0 2.5 v gs = 10 v thr u 4 v v ds - drain-to-so u rce v oltage ( v ) ) a ( t n e r r u c n i a r d - i d 3 v 0 6 12 1 8 24 30 v gs = 10 v i d - drain c u rrent (a) v gs = 4.5 v r ) n o ( s d m ( e c n a t s i s e r - n o - ) 0 . 020 0.01 8 0.016 0.014 0.012 0.010 i d 0 2 4 6 8 10 04 8 12 16 20 ) v ( e g a t l o v e c r u o s - o t - e t a g - q g - total gate charge (nc) v s g i d = 5 a v ds = 10 v v ds = 15 v v ds = 20 v transfer characteristics (ch 1) capacitance (ch 1) on-resistance vs. junction temperature (ch 1) 0.0 0.4 0. 8 1.2 1.6 2.0 012345 25 c t c = 125 c - 55 c v gs - gate-to-so u rce v oltage ( v ) ) a ( t n e r r u c n i a r d - i d 0 300 600 900 1200 1500 0 6 12 1 8 24 30 c oss c iss c rss v ds - drain-to-so u rce v oltage ( v ) ) f p ( e c n a t i c a p a c - c 0.6 0. 8 1.0 1.2 1.4 1 . 6 - 50 - 25 0 25 50 75 100 125 150 t j - j u nction temperat u re (c) r ) n o ( s d e c n a t s i s e r - n o - ) d e z i l a m r o n ( v gs = 10 v v gs = 4.5 v i d = 6 a
vishay siliconix si4972dy document number: 73849 s09-0138-rev. d, 02-feb-09 www.vishay.com 5 typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage (ch 1) threshold voltage (ch 1) 0.001 0.01 1 10 100 1.0 1.2 0.00 0.2 0.4 0.6 0. 8 v sd - so u rce-to-drain v oltage ( v ) ) a ( t n e r r u c e c r u o s - i s t j = 150 c t j = 25 c 0.1 - 0.9 - 0.6 - 0.3 0.0 0.3 0 . 6 - 50 - 25 0 25 50 75 100 125 150 t j - temperat u re (c) v ) h t ( s g ) v ( e c n a i r a v i d = 250 a i d = 5 ma on-resistance vs. gate-to-source (ch 1) single pulse power, junction-to-ambient (ch 1) 0.00 0.02 0.04 0.06 0.0 8 0 . 10 01234567 8 9 10 v gs - gate-to-so u rce v oltage ( v ) r ) n o ( s d ( e c n a t s i s e r - n o e c r u o s - o t - n i a r d -) t a = 25 c t a = 125 c i d = 6 a 0 10 20 30 40 50 0.001 0.001 0.01 0.1 1 10 time (s) po w er ( w ) safe operating area, junction-to-ambient (ch 1) 100 1 0.1 1 10 100 0.01 10 ) a ( t n e r r u c n i a r d - i d 0.1 1 ms t a = 25 c single p u lse 10 ms 100 ms dc v ds - drain-to-so u rce v oltage ( v ) * v gs minim u m v gs at w hich r ds(on) is specified 1 s 10 s limited b y r ds(on) *
www.vishay.com 6 document number: 73849 s09-0138-rev. d, 02-feb-09 vishay siliconix si4972dy typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistance, and is mo re useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limi t. current derating* (ch 1) 0 2 4 6 8 10 12 0 25 50 75 100 125 150 i d ) a ( t n e r r u c n i a r d - t c - case temperat u re (c) power derating, junction-to-foot (ch 1) 0.0 0. 8 1.6 2.4 3.2 4 . 0 0 25 50 75 100 125 150 t c - case temperat u re (c) ) w ( n o i t a p i s s i d r e w o p power derating, junction-to-ambient (ch 1) 0.0 0.3 0.6 0.9 1.2 1 .5 0 25 50 75 100 125 150 t a - am b ient temperat u re (c) ) w ( n o i t a p i s s i d r e w o p
vishay siliconix si4972dy document number: 73849 s09-0138-rev. d, 02-feb-09 www.vishay.com 7 typical characteristics 25 c, unless otherwise noted normalized thermal transient impedance, junction-to-ambient (ch 1) 0.2 10 -3 10 -2 10 10 -1 10 -4 100 0.02 sq u are w a v e p u lse d u ration (s) e v i t c e f f e d e z i l a m r o n t n e i s n a r t e c n a d e p m i l a m r e h t single p u lse t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 120 c/ w 3. t jm ? t a = p dm z thja (t) t 1 t 2 4. s u rface mo u nted 0.001 0.01 0.1 1 d u ty cycle = 0.5 1000 1 0.05 0.1 0.5 normalized thermal transient impedance, junction-to-case (ch 1) 10 -3 10 -2 1 10 10 -1 10 -4 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (s) e v i t c e f f e d e z i l a m r o n t n e i s n a r t e c n a d e p m i l a m r e h t 1 0.1 0.01
www.vishay.com 8 document number: 73849 s09-0138-rev. d, 02-feb-09 vishay siliconix si4972dy typical characteristics 25 c, unless otherwise noted output characteristics (ch 2) on-resistance vs. drain current gate voltage (ch 2) gate charge (ch 2) 0 6 12 1 8 24 30 0.0 0.5 1.0 1.5 2.0 2.5 v gs - drain-to-so u rce v oltage ( v ) ) a ( t n e r r u c n i a r d - i d v = 10 thr u 5 v gs 4 v 0.02 0.03 0.04 0.05 0.06 0 . 0 7 0 6 12 1 8 24 30 v gs = 10 v i d - drain c u rrent (a) v gs = 4.5 v r ) n o ( s d m ( e c n a t s i s e r - n o - ) 0 2 4 6 8 10 0246 8 10 ) v ( e g a t l o v e c r u o s - o t - e t a g - q g - total gate charge (nc) v s g i d = 5 a v ds = 15 v v ds = 10 v v ds = 20 v transfer characteristics (ch 2) capacitance (ch 2) on-resistance vs. junction temperature (ch 2) 0.0 0.3 0.6 0.9 1.2 1.5 012345 25 c t c = 125 c v gs - gate-to-so u rce v oltage ( v ) ) a ( t n e r r u c n i a r d - i d - 55 c c rss 0 130 260 390 520 650 0 6 12 1 8 24 30 c oss c iss v ds - drain-to-so u rce v oltage ( v ) ) f p ( e c n a t i c a p a c - c 0.6 0.9 1.2 1.5 1 . 8 - 50 - 25 0 25 50 75 100 125 150 t j - j u nction temperat u re (c) r ) n o ( s d e c n a t s i s e r - n o - ) d e z i l a m r o n ( v gs = 4.5 v i d = 4.5 a v gs = 10 v
vishay siliconix si4972dy document number: 73849 s09-0138-rev. d, 02-feb-09 www.vishay.com 9 typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage (ch 2) threshold voltage (ch 2) 0.001 0.01 1 10 100 1.0 1.2 0.00 0.2 0.4 0.6 0. 8 v sd - so u rce-to-drain v oltage ( v ) ) a ( t n e r r u c e c r u o s - i s t j = 150 c t j = 25 c 0.1 - 0.9 - 0.6 - 0.3 0.0 0.3 0 . 6 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a t j - temperat u re (c) v ) h t ( s g v ariance ( v ) i d = 5 ma on-resistance vs. gate-to-source temperature (ch 2) single pulse power, junction-to-ambient (ch 2) 0.00 0.04 0.0 8 0.12 0.16 0 . 20 0 2 v gs - gate-to-so u rce v oltage ( v ) r ) n o ( s d ( e c n a t s i s e r - n o e c r u o s - o t - n i a r d -) t a = 25 c t a = 125 c i d = 4.5 a 4 6 8 10 0 6 12 1 8 24 30 ) w ( r e w o p time (s) 1 10 0.1 0.01 0.001 safe operating area, junction-to-ambient (ch 2) 100 1 0.1 1 10 100 0.01 10 ) a ( t n e r r u c n i a r d - i d 0.1 1 ms 100 ms dc v ds - drain-to-so u rce v oltage ( v ) * v gs minim u m v gs at w hich r ds(on) is specified t a = 25 c single p u lse limited b y r ds(on) * 10 ms 10 s 1 s
www.vishay.com 10 document number: 73849 s09-0138-rev. d, 02-feb-09 vishay siliconix si4972dy typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistance, and is mo re useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limi t. current derating* (ch 2) power derating, junction-to-ambient (ch 2) 0 2 4 6 8 0 25 50 75 100 125 150 i d ) a ( t n e r r u c n i a r d - t c - case temperat u re (c) 0.0 0.3 0.6 0.9 1.2 1 .5 0 25 50 75 100 125 150 t a - am b ient temperat u re (c) ) w ( n o i t a p i s s i d r e w o p power derating, junction-to-foot (ch 2) 0.0 0. 8 1.6 2.4 3.2 4.0 0 25 50 75 100 125 150 t c - case temperat u re (c) ) w ( n o i t a p i s s i d r e w o p
vishay siliconix si4972dy document number: 73849 s09-0138-rev. d, 02-feb-09 www.vishay.com 11 typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73849 . normalized thermal transient impedance, junction-to-ambient (ch 2) f e d e z i l a m r o n t n e i s n a r t e v i t c e f e c n a d e p m i l a m r e h t p u lse time (s) 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 0.2 0.1 0.05 d u ty cycle = 0.5 1. d u ty cycle, d = 2. per unit base = r thja = 120 c/ w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 n otes: 4. s u rface mo u nted p dm single p u lse 0.02 normalized thermal transient impedance, junction-to-case (ch 2) 10 -3 10 -2 110 10 -1 10 -4 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (s) 1 0.1 0.01 f e d e z i l a m r o n t n e i s n a r t e v i t c e f e c n a d e p m i l a m r e h t
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.

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